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*model = bsim3  



*NewModel =   3  



*Cadence patibility Mode  



*These are BSIM3v3 Model Parameters  



*LotName=LOT_NAME UserName=USER Date=04…22…2002  



  



。Lib TT  



  



。model CMOSN NMOS(  



+Level=        49   



* GENERAL PARAMETERS  



+lmin=0。6e…6 lmax=20e…6 wmin=0。8e…6 wmax=20。0e…6  



+Tnom=25。0 version = 3。1 Tox= 1。25000E…08 Xj= 2。5000000E…07   



+Nch= 1。2721000E+17 lln= 1。0295000 lwn= 1。0000000  



+wln= 0。9340000 wwn= 2。0000000 lint= 1。5200000E…07 ll= …3。5900000E…14   



+wint= 2。0200001E…07 wl= …9。4300000E…14 ww= …5。1700000E…20   



+Mobmod=  1 binunit= 2 Dwg= …2。2914280E…08 Dwb= 1。3746710E…08   



* DIODE PARAMETERS  



+ldif=0。00 hdif=6E…7 rsh= 0 rd= 0 rs= 0 rsc= 0 rdc= 0  



* THRESHOLD VOLTAGE PARAMETERS  



+Vth0= 0。7278545 K1= 0。7409649 K2= …1。5283380E…02 K3= 7。1778210   



+Dvt0= 14。8549000 Dvt1= 1。0209540 Dvt2= …4。6828460E…02   



+Dvt0w= …8。0227880E…02 Dvt1w= 8。8635700E+04 Dvt2w= 0。1900000   



+Nlx= 0。00 W0= 1。3573220E…06 K3b= …4。7786870   



* MOBILITY PARAMETERS  



+Vsat= 7。7711460E+04 Ua= …7。4628200E…10 Ub= 2。6335220E…18   



+Uc= 3。5986350E…11 Rdsw= 1。8026500E+03 Prwb= 1。9065101E…02   



+Prwg= …3。4200580E…02 Wr= 0。9613520 U0= 4。2603870E…02 A0= 0。4940039   



+Keta= …1。6965831E…02 A1= 0。00 A2= 0。9900000 Ags= 1。9959440E…02   



+B0= 8。6096910E…08 B1= …4。3232750E…07   



* SUBTHRESHOLD CURRENT PARAMETERS  



+Voff= …9。6102280E…02 NFactor= 1。0989590 Cit= 2。3121500E…04   



+Cdsc= 4。8599650E…03 Cdscb= 9。1149930E…04 Cdscd= 0。00   



+Eta0= 6。2591110E…03 Etab= …1。1673500E…02 Dsub= 0。2718996   

                                                                               209  


…………………………………………………………Page 658……………………………………………………………

* ROUT PARAMETERS  



+Pclm= 0。6415634 Pdiblc1= 9。6421800E…03 Pdiblc2= 1。5307820E…03   



+Pdiblcb= …0。1822976 Drout= 0。1000000 Pscbe1= 2。7371760E+08   



+Pscbe2= 4。6373430E…06 Pvag= 0。00 Delta= 1。0000000E…02   



+Alpha0= 0。00 Beta0= 30。0000000   



* TEMPERATURE EFFECTS PARAMETERS  



+kt1= …0。3333333 kt2= …2。6930001E…02 At= 1。2000000E+04   



+Ute= …1。6454999 Ua1= 1。1130000E…09 Ub1= …1。0460000E…18   



+Uc1= …6。6220000E…12 Kt1l= 0。00 Prt= 8。4800000E+02   



* CAPACITANCE PARAMETERS  



+Cj= 4。350548E…04 Mj= 。4223898 Pb= 。9590048 Cjsw= 3。648853E…10   



+Mjsw= 。1671139 Php= 。5406927 Cta= 0 Ctp= 0 Pta= 0 Ptp= 0   



+JS=1。00E…14 JSW=0。00 N=1。0 Xti=3。0 Cgdo=2。0E…10 Cgso=2。0E…10  



+Cgbo=1。0E…13 Capmod= 2 NQSMOD= 0 Elm= 5 Xpart= 0  



+cgsl= 2。0000000E…10 cgdl= 2。0000000E…10 ckappa= 1。9920000   



+cf= 0。00 clc= 8。0259140E…09 cle= 2。0475841 Dlc= 1。5184E…07  



+Dwc= 2。015E…07)  



  



。model CMOSP PMOS(  



+Level=        49   



* GENERAL PARAMETERS  



+lmin=0。6e…6 lmax=20e…6 wmin=0。8e…6 wmax=20。0e…6  



+Tnom=25。0 version = 3。1 Tox= 1。30000E…08 Xj= 3。0000001E…07   



+Nch= 2。5099999E+16 lln= 0。2000000 lwn= 1。0000000  



+wln= 1。0660000 wwn= 2。0000000  



+lint= …1。3000000E…09 ll= …1。3500000E…10 lwl= 1。4900000E…15   



+wint= 2。3999999E…07 wl= 5。5000000E…15 ww= …8。2200000E…20   



+Mobmod=  1 binunit= 2 Dwg= …2。9800001E…08 Dwb= 2。0800000E…08   



* DIODE PARAMETERS  



+ldif=0。00 hdif=6E…7 rsh= 0 rd= 0 rs= 0 rsc= 0 rdc= 0  



* THRESHOLD VOLTAGE PARAMETERS  



+Vth0= …1。0168999 K1= 0。4355000 K2= 1。2700000E…02 K3= 11。1944000   



+Dvt0= 6。4793000 Dvt1= 0。9395000 Dvt2= 8。7300000E…03 Dvt0w=  



3。7900000E…02   



+Dvt1w= 0。00 Dvt2w= 0。1900000 Nlx= 0。00 W0= 2。9399999E…07   



+K3b= …2。3515999   



* MOBILITY PARAMETERS  



+Vsat= 9。4300000E+04 Ua= 1。9199999E…09 Ub= 7。7500000E…19   



+Uc= …5。0000000E…11 Rdsw= 3。3300000E+03 Prwb= 9。9200000E…02   

210    


…………………………………………………………Page 659……………………………………………………………

+Prwg= …3。7100000E…02 Wr= 0。9804000 U0= 1。9200001E…02 A0= 0。2612000   



+Keta= …1。4800000E…02 A1= 0。00 A2= 0。4000000 Ags= 2。0000000E…02   



+B0= 3。1600001E…07 B1= …3。0300001E…07   



* SUBTHRESHOLD CURRENT PARAMETERS  



+Voff= …0。1054000 NFactor= 0。8294000 Cit= 9。8500000E…04   



+Cdsc= 1。0000000E…10 Cdscb= 0。00 Cdscd= 0。00 Eta0= 0。1185000   



+Etab= …3。2900000E…03 Dsub= 0。5157000   



* ROUT PARAMETERS  



+Pclm= 2。9535999 Pdiblc1= 1。0000000E…05 Pdiblc2= 1。2900000E…03   



+Pdiblcb= 0。1900000 Drout= 3。0000000 Pscbe1= 3。7000000E+08   



+Pscbe2= 1。0000000E…10 Pvag= 1。0000000 Delta= 1。0000000E…02   



+Alpha0= 0。00 Beta0= 30。0000000   



* TEMPERATURE EFFECTS PARAMETERS  



+kt1= …0。4763000 kt2= …2。9050000E…02 At= 1。0000000E+04 Ute= …1。0000000   



+Ua1= 3。7500000E…09 Ub1= …7。1500000E…18 Uc1= …5。0833000E…11   



+Kt1l= 0。00 Prt= …8。8300000E+02   



* CAPACITANCE PARAMETERS  



+Cj= 8。208121E…04 Mj= 。5198076 Pb= 。9180865 Cjsw= 4。107676E…10   



+Mjsw= 。2586436 Php= 。6054589 Cta= 0 Ctp= 0 Pta= 0 Ptp= 0 JS=1。00E…04  



+JSW=0。00 N=1。0 Xti=3。0 Cgdo=1。0E…10 Cgso=1。0E…10 Cgbo=1。0E…13  



+Capmod= 2 NQSMOD= 0 Elm= 5 Xpart= 0 cgsl= 1。0000000E…10   



+cgdl= 9。9592000E…11 ckappa= 1。0000000 cf= 0。00 clc= 5。0018750E…08   



+cle= 0。8024064 Dlc= …1。421085E…14 Dwc= 2。304E…07)  



******************************************************  



*********  subcircuit   ******************************  



*****************************************************  



。SUBCKT CMOSN D G S B PARAMS: L=0。6U W=0。8U   



  MN1 D G S B CMOSN L=L W=W AD='W*1。8*1e…6'  AS='W*1。8*1e…6'  



PS='(W+1。8*1e…6)*2' PD='(W+1。8*1e…6)*2'   



。ENDS  



*  



。SUBCKT CMOSP D G S B PARAMS: L=0。6U W=0。8U   



  MP1 D G S B CMOSP L=L W=W AD='W*1。8*1e…6'  AS='W*1。8*1e…6'  



PS='(W+1。8*1e…6)*2' PD='(W+1。8*1e…6)*2'   



。ends  



  



****************************************************  



****************************************************  



。Endl TT  

                                                                                211  


…………………………………………………………Page 660……………………………………………………………

MOSIS 0。25um  



MOSIS Parametric Test Results  



http://mosis。org/  



RUN: T02D                                                VENDOR: TSMC  

TECHNOLOGY: SCN025                        FEATURE SIZE: 0。25 microns  

  

INTRODUCTION: This report contains the lot average results obtained by MOSIS from  

measurements of MOSIS test structures on each wafer of this fabrication lot。 SPICE  

parameters obtained from similar measurements on a selected wafer are also attached。  

  

MENTS: TSMC 0251P5M。  



   



                                                                                                      



  



0。25μm BSIM3v3。1 NMOS Parameters  



。MODEL CMOSN NMOS ( LEVEL = 49  



+VERSION = 3。1 TNOM = 27 TOX = 5。7E…9  



+XJ = 1E…7 NCH = 2。3549E17 VTH0 = 0。4273342  



+K1 = 0。3922983 K2 = 0。0185825 K3 = 1E…3  



+K3B = 2。0947677 W0 = 2。171779E…7 NLX = 1。919758E…7  



+DVT0W = 0 DVT1W = 0 DVT2W = 0  



+DVT0 = 7。137212E…3 DVT1 = 6。066487E…3 DVT2 = …0。3025397  



+U0 = 403。1776038 UA = …3。60743E…12 UB = 1。323051E…18  



+UC = 2。575123E…11 VSAT = 1。616298E5 A0 = 1。4626549  



212    


…………………………………………………………Page 661……………………………………………………………

+AGS = 0。3136349 B0 = 3。080869E…8 B1 = …1E…7  



+KETA = 5。462411E…3 A1 = 4。653219E…4 A2 = 0。6191129  



+RDSW = 345。624986 PRWG = 0。3183394 PRWB = …0。1441065  



+WR = 1 WINT = 8。107812E…9 LINT = 3。375523E…9  



+XL = 3E…8 XW = 0 DWG = 6。420502E…10  



+DWB = 1。042094E…8 VOFF = …0。1083577 NFACTOR = 1。1884386  



+CIT = 0 CDSC = 2。4E…4 CDSCD = 0  



+CDSCB = 0 ETA0 = 4。914545E…3 ETAB = 4。215338E…4  



+DSUB = 0。0313287 PCLM = 1。2088426 PDIBLC1 = 0。7240447  



+PDIBLC2 = 5。120303E…3 PDIBLCB = …0。0443076 DROUT = 0。7752992  



+PSCBE1 = 4。451333E8 PSCBE2 = 5E…10 PVAG = 0。2068286  



+DELTA = 0。01 MOBMOD = 1 PRT = 0  



+UTE = …1。5 KT1 = …0。11 KT1L = 0  



+KT2 = 0。022 UA1 = 4。31E…9 UB1 = …7。61E…18  



+UC1 = …5。6E…11 AT = 3。3E4 WL = 0  



+WLN = 1 WW = …1。22182E…16 WWN = 1。2127  



+WWL = 0 LL = 0 LLN = 1  



+LW = 0 LWN = 1 LWL = 0  



+CAPMOD = 2 XPART = 0。4 CGDO = 6。33E…10  



+CGSO = 6。33E…10 CGBO = 1E…11 CJ = 1。766171E…3  



+PB = 0。9577677 MJ = 0。4579102 CJSW = 3。931544E…10  



+PBSW = 0。99 MJSW = 0。2722644 CF = 0  



+PVTH0 = …2。126483E…3 PRDSW = …24。2435379 PK2 = …4。788094E…4  



+WKETA = 1。430792E…3 LKETA = …6。548592E…3 )  



0。25μm BSIM3v3。1 PMOS Parameters  



MODEL CMOSP PMOS ( LEVEL = 49  



+VERSION = 3。1 TNOM = 27 TOX = 5。7E…9  



+XJ = 1E…7 NCH = 4。1589E17 VTH0 = …0。6193382  



+K1 = 0。5275326 K2 = 0。0281819 K3 = 0  



+K3B = 11。249555 W0 = 1E…6 NLX = 1E…9  



+DVT0W = 0 DVT1W = 0 DVT2W = 0  



+DVT0 = 3。1920483 DVT1 = 0。4901788 DVT2 = …0。0295257  



+U0 = 185。1288894 UA = 3。40616E…9 UB = 3。640498E…20  



+UC = …6。35238E…11 VSAT = 1。975064E5 A0 = 0。4156696  



+AGS = 0。0702036 B0 = 3。111154E…6 B1 = 5E…6  



+KETA = 0。0253118 A1 = 2。421043E…4 A2 = 0。6754231  



+RDSW = 866。896668 PRWG = 0。0362726 PRWB = …0。293946  



                                                                                                  213  


…………………………………………………………Page 662……………………………………………………………

+WR = 1 WINT = 6。519911E…9 LINT = 2。210804E…8  



+XL = 3E…8 XW = 0 DWG = …2。423118E…8  



+DWB = 3。052612E…8 VOFF = …0。1161062 NFACTOR = 1。2546896  



+CIT = 0 CDSC = 2。4E…4 CDSCD = 0  



+CDSCB = 0 ETA0 = 0。7241245 ETAB = …0。3675267  



+DSUB = 1。1734643 PCLM = 1。0837457 PDIBLC1 = 9。608442E…4  



+PDIBLC2 = 0。0176785 PDIBLCB = …9。605935E…4 DROUT = 0。0735541  



+PSCBE1 = 1。579442E10 PSCBE2 = 6。707105E…9 PVAG = 0。0409261  



+DELTA = 0。01 MOBMOD = 1 PRT = 0  



+UTE = …1。5 KT1 = …0。11 KT1L = 0  



+KT2 = 0。022 UA1 = 4。31E…9 UB1 = …7。61E…18  



+UC1 = …5。6E…11 AT = 3。3E4 WL = 0  



+WLN = 1 WW = 

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